Joon Seop Kwak곽준섭 교수
Professor, Department of Energy Technology
Korea Instititute of Energy Technology
72, Ujeong-ro, Naju-si, Jeollanam-do, Korea
- Mobile010-8393-3537
- E-mailjskwak@kentech.ac.kr
RESEARCH INTEREST
3D structured wide-bandgap power semiconductor materials & devices Simulation & fabrication of low power consumption micro/nano-LEDs for EV and AR/VR Improved efficiency of wide-bandgap power semiconductors and light emitters
CURRENT RESEARCH FIELD
AlGaN/GaN power semiconductor devices for EV and HA Low power consumption micro/nano-LED arrays for EV and AR Multilevel metallization and reliability of power electronics
OTHER ACHIEVEMENTS or ACTIVITIES
SCI papers > 180 papers US granted patent > 35 (International granted patent > 75, Korean granted patent > 95) Technology Transfer > 10 Director, Center for Practical Use of Rare Materials (2008~present) Director, Advanced IT-Convergence Materials Institute (2020~present) Dean, Academic Affairs [2018] Vice Dean, University-Industry Cooperation Foundation [2011-2013] Vice Dean, Planning and Cooperation Offices [2007-2008]
Representative Recent Publications
[ AlGaN/GaN Power Semiconductors ]
Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs,
IEEE T. Electron Devices, 63 (2016) 620 High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance,
Appl. Phys. Lett, 111 (2017) 133502 Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization,
Appl. Phys. Express, 10 (2017) 016502 Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications (Invited Review),
Journal of Electronic Packaging, 141 (2019) 020801 Realization of high-power dimmable GaN-based LEDs by hybrid integration with AlGaN/GaN HFETs,
Jap. J. appl. Phys., 58 (2019) SCCC12
[ Low power consumption GaN-based LED and micro-LED arrays ]
The Impact of Carrier Transport Confinement on the Energy Transfer Between InGaN/GaN Quantum-Well Nanorods and Colloidal Nanocrystals,
Adv. Funct. Mater., 22 (2012) 3146 Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes,
Scientific Reports, 5 (2015) 9717 Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on p-GaN for InGaN/GaN Light-Emitting Diodes,
Advanced Science, 5 (2018) 1700637 Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes,
Appl. Surf. Sci., 477 (2019) 477 Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-LEDs by originating inhomogeneous Schottky barrier height,
Photonics Research, 8 (2020) 1049 Improvement of Ti/Al ohmic contacts on N-face n-type GaN by using O2 plasma treatment,
Appl. Surf. Sci., 510 (2020) 145180 Impact of grain growth of silver reflective electrode by electron bombardment on external quantum efficiency of III-nitride micro-light emitting diode arrays,
Appl. Surf. Sci., 512 (2020) 145698
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