Strain relaxation caused by defects in InGaN-based multiple-quantum-well near-ultraviolet light-emitting diodes investigated by macroscopic characterization 2020

• Year of publication

  2020

• Author

  ABM Hamidul Islam, Dong-Soo Shin, Joon Seop Kwak, Jong-In Shim

• Journal

  Gallium Nitride Materials and Devices XV

• Volume

  11280

• Page

  1128014