Information & Opto-Energy Materials (IOEM) Laboratory

Wide-bandgap power semiconductors

The market for wide-bandgap power-semiconductor heterostructure field-effect transistors (HFETs), also called high electron mobility transistors (HEMTs), is expanding as these structures demonstrate improved size, weight, and power and efficiency over silicon-based power devices for electrified vehicles. These advantages arise due to favorable material properties such as high electron saturation velocity, high critical electric field, high electron mobility, and high carrier density. Rapid progress in material and fabrication technologies has enabled the development and commercialization of high power wide-bandgap semiconductor devices.

Low power consumption IIII-nitrides mm-to-nano LEDs

Over the last three decades, light-emitting diodes (LEDs) based on III-nitrides and their alloys, which achieved high conversion efficiencies and covered UV/blue/green spectrum, were employed in general lighting, display, vehicle illumination and hand-held devices, thanks to their advantageous characteristics of of low energy consumption, design flexibility, and long lifespans. More recently, there has been a growing interest in micro/nano LED arrays based on InGaN/GaN heterostructures due to their novel application in virtual and augmented reality (VR/AR) display, head-up display, and adaptive driving beam (ADB) for a headlamp of a vehicle.

Our research group focus on creative design & process technology for high energy conversion efficiency AlGaN/GaN power transistors and low power consumption IIII-nitrides mm-to-nano LEDs.