Electron-beam irradiation on ultrathin films

• The effect of electron beam irradiation (EBI) on Indium-Gallium-Zinc-oxide (IGZO)-based thin film transistor (TFT) is investigated.

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• The effect of electron-beam irradiation (EBI) on Ag reflector is investigated in order to improve the efficiency of flip-chip InGaN/GaN multiple-quantum-wells micro light-emitting diode (μ-LED) arrays.

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Damage-free RF superimposed DC sputtering of ITO on p-GaN

• We systematically studied the origin of plasma-induced damage on a p-type wide-band-gap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radio-frequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE).

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Major facilities of Lab